RESISTIVE RANDOM ACCESS MEMORY WITH HIGH UNIFORMITY AND LOW POWER CONSUMPTION AND METHOD FOR FABRICATING THE SAME

摘要

Disclosed is a resistive random access memory, comprising a substrate, an insulating layer, a bottom electrode, a resistive material film, and a top electrode in an order from bottom to top, wherein the resistive material film is a four-layer structure composed of a same metal oxide; and the four layers in the four-layer structure from bottom to top have resistance values which are increased one after another by more than 10 times, oxygen concentrations which are increased one after another and thickness which are decreased one after another. The present invention may achieve complete formation-rupture of oxygen vacancy conductive filaments (CF) in each layer by dividing the resistive material film of the same metal oxide into four layers according to the different oxygen concentrations, so as to control accurately the resistance values, so that 2-bit storage with high uniformity is achieved.

主权项

1. A resistive random access memory, comprising a substrate, an insulating layer, a bottom electrode, a resistive material film, and a top electrode in an order from bottom to top, wherein the resistive material film is a four-layer structure composed of a same metal oxide; and the four layers in the four-layer structure from bottom to top have resistance values which are increased one after another by at least 10 times, oxygen concentrations which are increased one after another and thicknesses which are decreased one after another.