Bipolar transistor

摘要

A bipolar transistor incorporates a first collector region of monocrystalline silicon with a first type of conductivity surmounted by a second region with a monocrystalline base of silicon and germanium with a second type of conductivity. The base region contains a third emitter region of the first type of conductivity situated on the side opposite the collector region and coated with a metal. The emitter region has a thickness of less than 50 nanometers (nm) and preferably between 5 and 30 nm. An independent claim is also included for the production of the bipolar transistor.