| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reliable semiconductor device including a thin-film transistor having stable electrical characteristics, and to manufacture the reliable semiconductor device at low costs with high productivity. <P>SOLUTION: In a method of manufacturing the semiconductor device including the thin-film transistor, where a semiconductor layer including a channel formation layer and a semiconductor layer including source and drain regions are made of oxide semiconductor layers each, purity of the oxide semiconductor layers is improved, and heat treatment (heat treatment for dehydration or dehydrogenation) for reducing moisture, namely an impurity, is performed. Also, the heat-treated oxide semiconductor layers are slowly cooled under an oxygen atmosphere. <P>COPYRIGHT: (C)2011,JPO&INPIT |
