| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide proton-conductive film having little faults such as pinholes, a high reliability and a high proton conductivity, to provide a hydrogen permeation structure using the oxide proton-conductive film, and to provide a manufacturing method of the hydrogen permeation structure. <P>SOLUTION: The oxide proton-conductive film is composed of a perovskite structure oxide represented by the general formula A<SB>a</SB>L<SB>b(1-x)</SB>M<SB>bx</SB>O<SB>3</SB>(A represents an element selected from Ba, Mg, Ca and Sr; L represents an element selected from Ce, Zr, Ti and Hf; M represents an element selected from elements of group 3 and group 13; and 0.5<a<2.0 and 0.5<a/b<2.0), and has a thickness of ≥20 nm and ≤500 nm, and an electric resistance in the air of ≥100 kΩ. The hydrogen permeation structure is obtained by forming the oxide proton-conductive film on a hydrogen permeation substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT |
