Method for producing optoelectronic semiconductor chips

摘要

The method is designed for producing optoelectronic semiconductor chips and comprises the steps:
A) providing a carrier substrate (1),B) applying a semiconductor layer sequence (2) onto the carrier substrate (1), andC) detaching the finished semiconductor layer sequence (2) from the carrier substrate (1) by means of laser radiation (R) with a wavelength (L) through the carrier substrate (1), wherein
the semiconductor layer sequence (2) has a buffer layer stack (20) and a functional stack with an active layer (21) for generating light (22),the absorber layer (23) is grown within the buffer layer stack (20) from a material for absorbing the laser radiation (R) and all the remaining layers (24 and 25) of the buffer layer stack (20) are transmissive to the laser radiation (R),a material of the functional stack (22) preferably has an absorbent action for the laser radiation (R), andin step C) the semiconductor layer sequence (2) is detached in the region of the absorber layer (23).

主权项

1. A method for producing optoelectronic semiconductor chips comprising the steps:
A) providing a carrier substrate; B) applying a semiconductor layer sequence onto the carrier substrate; and C) detaching the finished semiconductor layer sequence (2) from the carrier substrate by means of laser radiation (R) with a wavelength through the carrier substrate, wherein the semiconductor layer sequence, in the direction away from the carrier substrate, has a buffer layer stack and a functional stack, wherein the functional stack comprises at least one active layer for generating light, wherein at least one absorber layer is located within the buffer layer stack, wherein the absorber layer is formed from a material for absorbing the laser radiation and all the remaining layers of the buffer layer stack are transmissive to the laser radiation, wherein in step C) the semiconductor layer sequence is detached from the carrier substrate in the region of the absorber layer, and wherein the absorber layer in step C) is located at a maximum of a radiant intensity of the laser radiation in the semiconductor layer sequence.