Composite device with integrated diode

摘要

There are disclosed herein various implementations of composite semiconductor devices. In one implementation, such a composite semiconductor device includes a transition body formed over a diode, the transition body including more than one semiconductor layer. The composite semiconductor device also includes a transistor formed over the transition body. The diode may be connected across the transistor using through-semiconductor vias, external electrical connectors, or a combination of the two.

主权项

1. A composite semiconductor device comprising:
a diode including an anode and a cathode; a transition body formed over said cathode, said transition body including a plurality of semiconductor layers; a transistor formed over said transition body, said transistor including a source and a drain; said source being connected to said diode by a first electrical connector, wherein said first electrical connector is selected from the group consisting of a conductive metal clip, a conductive ribbon, and a bond wire; said drain being connected to said diode by a second electrical connector.