发明名称 Synchronous random access memory
摘要 An internal address signal corresponding to data to be written into a memory cell is held in a latch circuit. The held internal address signal is selected by a multiplexer in the next writing operation and applied to a decoder. Write data is taken in and held by the latch circuit during the period in which data is not being read out from the memory cell array. A comparator compares the held internal address signal and an internal address signal for reading data. If a matching is found between them, the multiplexer outputs data from the latch circuit for external output. Accordingly, delay of a writing operation following a reading operation can be eliminated without increasing chip cost, package cost, and system cost, as a result high speed operation of cache memories is achieved and the speed performance of computers of various levels such as supercomputers, large size calculators, work stations and personal computers can be improved.
申请公布号 US6327188(B1) 申请公布日期 2001.12.04
申请号 US20000477560 申请日期 2000.01.04
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 WADA TOMOHISA
分类号 G11C11/413;G11C7/10;G11C8/00;G11C11/401;G11C11/407;(IPC1-7):G11C13/00 主分类号 G11C11/413
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