| 摘要 |
PURPOSE:To improve the reproducibility by obtaining the semiconductor element showing superlattice effect by a method wherein a relation expressed by a fixed inequality is made valid among the amplitude of the spatial periodical variation of the energy value Ec of the lower end of a conduction band, a crystal layer thickness of the maximum Ec value, and the effective mass and the Planck's constant in this semiconductor material. CONSTITUTION:An InP layer 2 of fixed thickness is laminated on an N type InP substrate 1, and further a superlattice layer 3 produced by alternate lamination of InP layers and InGaAsP layers is formed on the layer 2. Moreover, an InP clad layer 4 of fixed thickness is successively grown on the layer 3, resulting in the manufacture of a multi-layer semiconductor crystal; then, metallic electrodes 5 and 6 are evaporated on its lower and upper surfaces, respectively. The spatial periodical variation of the energy value Ec of the lower end of a conducting band developing with this polycrystalline structure is DELTAEc. Besides, the relation of an inequality of 2mXDELTAEcXb<2>/h<2 6X10<-2> is made valid between the thickness (b) of a crystal layer made of semiconductor material having the maximum value Ec and the effective mass (m) and the Planck's constant (h) in this material, thus contriving the improvement in superlattice effect of the semiconductor element. |
