发明名称 Magnetic sensors and memory devices
摘要 <p>The present invention provides a tunnel-effect type magnetoresistive head (120) which can prevent degradation of a tunnel-effect type magnetoresistive effect element caused by contact with a magnetic recording medium without degrading a shielding effect. In this tunnel-effect type magnetoresistive head (120), for the above purpose, an exposed surface area of a shield and electrode layer, which is viewed from an air bearing surface, is decreased, and a shield layer is also provided outside the shield and electrode layer.</p>
申请公布号 EP1884926(A2) 申请公布日期 2008.02.06
申请号 EP20070104535 申请日期 2007.03.20
申请人 FUJITSU LTD. 发明人 KITAJIMA, MASAMITSU
分类号 G11B5/39;G11B5/31;G11B5/40 主分类号 G11B5/39
代理机构 代理人
主权项
地址