摘要 |
<p>The present invention provides a tunnel-effect type magnetoresistive head (120) which can prevent degradation of a tunnel-effect type magnetoresistive effect element caused by contact with a magnetic recording medium without degrading a shielding effect. In this tunnel-effect type magnetoresistive head (120), for the above purpose, an exposed surface area of a shield and electrode layer, which is viewed from an air bearing surface, is decreased, and a shield layer is also provided outside the shield and electrode layer.</p> |