发明名称 |
Cell of Semiconductor Device Having Sub-193 Nanometers-Sized Gate Electrode Conductive Structures Formed from Rectangular Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks |
摘要 |
A cell of a semiconductor device is disclosed to include a diffusion level including a plurality of diffusion regions separated by inactive regions. The cell also includes a gate electrode level including a number of conductive features defined to extend in only a first parallel direction. Each of the conductive features within the gate electrode level is fabricated from a respective originating rectangular-shaped layout feature. The gate electrode level includes conductive features defined along at least four different virtual lines of extent in the first parallel direction. A width size of the conductive features within a five wavelength photolithographic interaction radius within the gate electrode level is less than a wavelength of light of 193 nanometers. The cell also includes a number of interconnect levels formed above the gate electrode level.
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申请公布号 |
US2010019282(A1) |
申请公布日期 |
2010.01.28 |
申请号 |
US20090571357 |
申请日期 |
2009.09.30 |
申请人 |
TELA INNOVATIONS, INC. |
发明人 |
BECKER SCOTT T.;SMAYLING MICHAEL C. |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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