| 发明名称 | Nonvolatile memory devices and program verification methods using one verification voltage to verify memory cells having different target states | ||
| 摘要 | A program verification method is for a nonvolatile memory device which programs a plurality of memory cells. The program verification method includes applying a plurality of verification voltages, and determining whether programming of memory cells, having different target threshold voltage distributions, from among the plurality of memory cells is completed based on one of the plurality of verification voltages. | ||
| 申请公布号 | US9406393(B2) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201514668043 | 申请日期 | 2015.03.25 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Park Ilhan;Kim Ji-Suk;Song Jung-Ho;Ahn Yang-Lo |
| 分类号 | G11C16/04;G11C16/34;G11C16/10;G11C16/08 | 主分类号 | G11C16/04 |
| 代理机构 | Volentine & Whitt, PLLC | 代理人 | Volentine & Whitt, PLLC |
| 主权项 | 1. A program verification method of a nonvolatile memory device which programs a plurality of memory cells connected to a word line, comprising: applying a plurality of verification voltages to the word line; and determining whether programming of memory cells, having different target threshold voltage distributions, from among the plurality of memory cells is completed based on one verification voltage among the plurality of verification voltages. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||