Semiconductor memory with sense amplifier

摘要

In an exemplary aspect, the present invention provides a semiconductor memory device including sense amplifiers that drive bit lines to which memory cells are connected, and driver transistors that supply a power supply to the sense amplifiers, wherein the sense amplifiers are arranged in rows and constitutes a first sense-amplifier row in which transistors of a first conductive type are arranged and a second sense-amplifier row in which transistors of a second conductive type are arranged, and the driver transistors constitutes at least one transistor row including a first driver transistor of the first conductive type corresponding to the first sense-amplifier row and a second driver transistor of the second conductive type corresponding to the second sense-amplifier row between the first sense-amplifier row and the second sense-amplifier row.

主权项

1. A semiconductor memory device, comprising:
a plurality of sense amplifiers, each of the sense amplifiers amplifying a difference in potential between a pair of bit lines; a plurality of sense amplifier drivers supplying a power supply to the sense amplifiers, each of the sense amplifier drivers having a first driver transistor and a second driver transistor, the first driver transistor having a different conductivity type from the second driver transistor, the first driver transistor and the second driver transistor being alternately arranged in a first direction, and an element separation boundary arranged between the first driver transistor and the second driver transistor in a second direction which is different from the first direction, wherein a third direction orthogonal to a direction of gate length of the first driver transistor is parallel to the first direction, wherein a fourth direction orthogonal to a direction of gate length of the second driver transistor is parallel to the first direction, wherein the first direction is parallel to the extending direction of word lines.