ETCHING APPARATUS OF SEMICONDUCTOR DEVICE FABRICATION

摘要

An etching apparatus for semiconductor device manufacturing is provided to reduce deposition amount and minute particles by using a plate baffle coated with Y2O3 to improve reliability and productivity of a semiconductor device. An upper electrode(102) and a lower electrode(104) are formed in a process chamber(100) to apply RF power for forming plasma. A gas inlet unit(110) is formed on a center of the upper electrode and supplies a reactive gas necessary to an etching process into the process chamber. A vacuum pump(112) performs a pumping operation to keep a vacuum state in an inside of the process chamber. A pressure gage(114) measures a degree of vacuum of the process chamber. A plate baffle(116) coated with Y2O3 exhausts a non-reactive gas remaining in the process chamber to the outside. The plate baffle prevents a vortex flow due to pumping in the process chamber form generating to form stable plasma.