Insulated gate bipolar transistor

摘要

A semiconductor body of an IGBT includes: a first base region of a second conductivity type; a source region of a first conductivity type different from the second conductivity type and forming a first pn-junction with the first base region; a drift region of the first conductivity type and forming a second pn-junction with the first base region; a collector region of the second conductivity type; at least one trench filled with a gate electrode and having a first trench portion of a first width and a second trench portion of a second width, the second width being different from the first width; and a field stop region having the first conductivity type and located between the drift region and the collector region. The field stop region includes a plurality of buried regions having the second conductivity type.

主权项

1. An insulated gate bipolar transistor, comprising a semiconductor body including:
a first base region having a second conductivity type; a source region having a first conductivity type different from the second conductivity type and forming a first pn-junction with the first base region; a drift region having the first conductivity type and forming a second pn-junction with the first base region; a collector region having the second conductivity type; at least one trench filled with a gate electrode and having a first trench portion of a first width and a second trench portion of a second width, the second width being different from the first width; and a field stop region having the first conductivity type and located between the drift region and the collector region, wherein the field stop region comprises:
a first continuous deep level doped region of the first conductivity type having a first deep level atom doping concentration; anda second continuous deep level doped region of the first conductivity type closer to a third pn-junction between the collector region and the field stop region than the first continuous deep level doped region and having a second deep level atom doping concentration, wherein the first continuous deep level doped region directly adjoins the second continuous deep level doped region along an entire length of the first continuous deep level doped region, wherein the second deep level atom doping concentration is larger than the first deep level atom doping concentration, wherein the semiconductor body comprises an energy band gap with a deep energy level that is at least 0.2 eV below a conduction band edge of the energy band gap wherein the first and second continuous deep level doped regions are each doped with dopant atoms having energy levels that are in the deep energy level of the energy band gap; and wherein the dopant atoms of the first continuous deep level doped region are of a first element, and the dopant atoms of the second continuous deep level doped region are of a second element that is different from the first element.