| 摘要 |
PROBLEM TO BE SOLVED: To achieve a semiconductor light emitting element having high yield.SOLUTION: A semiconductor light emitting element comprises: a substrate; a first semiconductor layer, an active layer and a second semiconductor layer which are formed in upper layers on the substrate; and a first electrode. The second semiconductor layer is composed of a nitride semiconductor having a conductivity type different from that of the first semiconductor layer and a surface located in a first region and opposite to the active layer is composed to include an uneven surface and a surface located in a second region different from the first region and on the side opposite to the active layer is composed of a flat surface. The first electrode contacts the first semiconductor layer in the second region and is formed in a state off having an insulation property against the active layer and the second semiconductor layer. In upper layers on the first semiconductor layer, which are located in a region out of the second region, where the first electrode contacts, the active layer and the second semiconductor layer are not formed.SELECTED DRAWING: Figure 1 |
