| 摘要 |
<p>Influence of an n-type impurity on a semipolar regrowing interface is reduced in a III nitride semiconductor laser element that is provided with a configuration wherein a p-type cladding layer is regrown on a current-narrowing layer having an opening. A semiconductor laser element (10) is provided with an n-type semiconductor region (14), an active layer (16), a first p-type semiconductor region (18), a current-narrowing layer (20), and a second p-type semiconductor region (22). The second p-type semiconductor region (22) is a region regrown on the first p-type semiconductor region (18) and the current-narrowing layer (20) after forming an opening (20a) in the current-narrowing layer (20). An interface in the first p-type semiconductor region (18), said interface being between the first p-type semiconductor region and the second p-type semiconductor region (22), includes a semipolar surface of the III nitride semiconductor. The first p-type semiconductor region (18) has a high-concentration p-type semiconductor layer (18c), which constitutes the interface between the first p-type semiconductor region (18) and the second p-type semiconductor region (22), and which has a p-type impurity concentration of 1×1020 cm-3 or more.</p> |
