METHOD FORMING SILICON OXYNITRIDE GATE DIELECTRIC LAYER WITH UNIFORM NITROGEN CONCENTRATION

摘要

A method of manufacturing a semiconductor device in a process camber is disclosed. The method includes forming a preliminary dielectric layer including oxynitride on a substrate by performing a plasma oxidation treatment and a first plasma nitridation treatment, wherein the preliminary dielectric layer has a substantially uniform nitrogen concentration profile to a defined depth, and forming a dielectric layer from the preliminary dielectric layer by performing a second plasma nitridation treatment, wherein the nitrogen concentration of the dielectric layer is higher than that of the preliminary dielectric layer.