METHOD OF MANUFACTURING CAPACITOR ELECTRODE, METHOD OF ETCHING AND ETCHING SYSTEM, AND STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a capacitor electrode which can substantially solve a leaning problem while securing a desired etch rate. SOLUTION: The method of manufacturing the capacitor electrode includes a step of forming a hole by etching a silicon oxide film formed on a wafer, a step of forming a conductor film on the internal surface of the hole, and a step of exposing the conductor film by removing the silicon oxide film to turn the conductor film into the capacitor electrode. In the step of exposing the conductor film by removing the silicon oxide film, the silicon oxide film is removed halfway by a wet process using a chemical and then the remaining part of the silicon oxide film is removed by a dry process using a gas. COPYRIGHT: (C)2008,JPO&INPIT