| 摘要 |
A mask pattern inspection method includes: transferring a mask pattern onto a conductor substrate or a semiconductor substrate; preparing a sample including a substrate surface pattern in an electrically conductive state to the substrate, the substrate surface pattern being constituted of a convex pattern or a concave pattern each having a shape in accordance with the transferred mask pattern, or a surface layer obtained by filling the concave pattern with a material; irradiating the sample with an electron beam to detect at least one of a secondary electron, a reflected electron and a backscattered electron generated from the surface of the sample, thereby acquiring an image of the sample surface; and inspecting the mask pattern on the basis of the image. |
