| 摘要 |
PROBLEM TO BE SOLVED: To deposit a copper seed layer on a substrate having an electrically conductive layer. SOLUTION: A substrate is contacted with an electroless copper plating bath, and a titanium nitride barrier layer is formed on the surface thereof by PVD. Next, by using the same as the cathode, voltage is applied for 60 sec, and a copper seed layer having a thickness of about 5 to 100 nm is deposited on an obstruction. The method is particularly suitable for the deposition of the copper seed layer on a substrate having a small opening part, particularly having an extremely small opening part.
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