发明名称 |
Atomic layer deposition method |
摘要 |
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. After forming the first monolayer, a reactive intermediate gas is flowed to the substrate within the deposition chamber. The reactive intermediate gas is capable of reaction with an intermediate reaction by-product from the first precursor flowing under conditions of the reactive intermediate gas flowing. After flowing the reactive intermediate gas, a second precursor gas is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.
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申请公布号 |
US2005039674(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
US20040956925 |
申请日期 |
2004.09.30 |
申请人 |
CASTOVILLO PAUL J.;BASCERI CEM;DERDERIAN GARO J.;SANDHU GURTEJ S. |
发明人 |
CASTOVILLO PAUL J.;BASCERI CEM;DERDERIAN GARO J.;SANDHU GURTEJ S. |
分类号 |
C23C16/34;C23C14/06;C23C14/08;C23C16/40;C23C16/44;C23C16/455;C30B25/14;H01L21/285;H01L21/316;H01L21/768;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14;H01L21/823 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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