| 摘要 |
A method for forming an isolation layer in a semiconductor memory device is provided to prevent damage of a tunnel oxide layer at a following heat treatment process. A tunnel oxide layer(101), a conductive layer(102) for a floating gate, a buffer oxide layer, and a pad nitride layer are formed on a semiconductor substrate(100). The pad nitride layer, the buffer oxide layer, the conductive layer, the tunnel oxide layer and the substrate are selectively etched to form trenches(105). A nitride layer(106) is formed on the entire surface of the substrate comprising the trenches, and then a first insulating layer(107) is formed on a bottom surface of the trench. A plasma process is performed on the substrate to oxidize the nitride layer. A second insulating layer(108) is formed on the entire surface to form an isolation layer.
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