发明名称 Thin film transistor substrate and liquid crystal display including the same
摘要 A thin film transistor array panel includes a first subpixel electrode and a second subpixel electrode electrically connected with a drain electrode through a first contact hole and a second contact hole, respectively. The first subpixel electrode and the second subpixel electrode include a plurality of vertical stems, a plurality of horizontal stems, and a plurality of branch electrodes. The first subpixel electrode is formed above a gate line and the second subpixel electrode is formed below a gate line. The thin film transistor array panel further includes a first protrusion formed in the plurality of vertical stems of the first subpixel electrode and the plurality of vertical stems of the second subpixel electrode.
申请公布号 US9448455(B2) 申请公布日期 2016.09.20
申请号 US201514661965 申请日期 2015.03.18
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 Lee Hee Hwan;Ahn Kyu Su;Kim Kyung Ho;Park Kee Bum
分类号 G02F1/1343;G02F1/1362;G02F1/1368;G02F1/1333;H01L27/12 主分类号 G02F1/1343
代理机构 Innovation Counsel LLP 代理人 Innovation Counsel LLP
主权项 1. A thin film transistor array panel comprising: a first substrate; a gate line and a plurality of storage electrode lines formed on the first substrate; a gate insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a data line, a drain electrode, and a divided reference voltage line formed on the semiconductor layer; a passivation layer covering the data line, the drain electrode, and the divided reference voltage line, wherein a first contact hole and a second contact hole are formed in the passivation layer partially exposing the drain electrode; a first subpixel electrode and a second subpixel electrode electrically connected with the drain electrode through the first and second contact holes, respectively, wherein the first subpixel electrode and the second subpixel electrode include a plurality of vertical stems, a plurality of horizontal stems, and a plurality of branch electrodes, and wherein the first subpixel electrode is formed above the gate line and the second subpixel electrode is formed below the gate line; and a first protrusion formed in the plurality of vertical stems of the first subpixel electrode and the plurality of vertical stems of the second subpixel electrode.
地址 KR