发明名称 |
Thin film transistor substrate and liquid crystal display including the same |
摘要 |
A thin film transistor array panel includes a first subpixel electrode and a second subpixel electrode electrically connected with a drain electrode through a first contact hole and a second contact hole, respectively. The first subpixel electrode and the second subpixel electrode include a plurality of vertical stems, a plurality of horizontal stems, and a plurality of branch electrodes. The first subpixel electrode is formed above a gate line and the second subpixel electrode is formed below a gate line. The thin film transistor array panel further includes a first protrusion formed in the plurality of vertical stems of the first subpixel electrode and the plurality of vertical stems of the second subpixel electrode. |
申请公布号 |
US9448455(B2) |
申请公布日期 |
2016.09.20 |
申请号 |
US201514661965 |
申请日期 |
2015.03.18 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
Lee Hee Hwan;Ahn Kyu Su;Kim Kyung Ho;Park Kee Bum |
分类号 |
G02F1/1343;G02F1/1362;G02F1/1368;G02F1/1333;H01L27/12 |
主分类号 |
G02F1/1343 |
代理机构 |
Innovation Counsel LLP |
代理人 |
Innovation Counsel LLP |
主权项 |
1. A thin film transistor array panel comprising:
a first substrate; a gate line and a plurality of storage electrode lines formed on the first substrate; a gate insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a data line, a drain electrode, and a divided reference voltage line formed on the semiconductor layer; a passivation layer covering the data line, the drain electrode, and the divided reference voltage line, wherein a first contact hole and a second contact hole are formed in the passivation layer partially exposing the drain electrode; a first subpixel electrode and a second subpixel electrode electrically connected with the drain electrode through the first and second contact holes, respectively, wherein the first subpixel electrode and the second subpixel electrode include a plurality of vertical stems, a plurality of horizontal stems, and a plurality of branch electrodes, and wherein the first subpixel electrode is formed above the gate line and the second subpixel electrode is formed below the gate line; and a first protrusion formed in the plurality of vertical stems of the first subpixel electrode and the plurality of vertical stems of the second subpixel electrode. |
地址 |
KR |