| 摘要 |
Disclosed is a single wafer LPCVD apparatus. The single wafer LPCVD apparatus comprises: a vacuum chamber having an upper part sealed by a quartz dome, the vacuum chamber receiving a single wafer loaded therein; a bell jar having a dome-shaped inner wall, covering the quartz dome, and spaced by a selected interval from the quartz dome; a dome-shaped plasma electrode established between the bell jar and the quartz dome; an RF power supply for applying an RF power to the dome-shaped plasma electrode; an adiabatic wall provided on the entire inner wall of the bell jar; a sheath heater having a heater wire and an insulator for covering the heater wire, the sheath heater being attached and established to a surface of the adiabatic wall in a shape of a coil; and a cooling pipe established in a wall of the bell jar. Temperature uniformity within the vacuum chamber is enhanced and the manufacture of a high-temperature heater for hot processing is unnecessary. A dome-shaped plasma electrode is replaced with the metal tube, so that heat transfer from the sheath heater into the vacuum chamber can be carried out very efficiently as well as inductively coupled plasma can be obtained.
|
