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发明名称
MAGNETIC RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING THE SAME
摘要
申请公布号
KR20060064889(A)
申请公布日期
2006.06.14
申请号
KR20040103569
申请日期
2004.12.09
申请人
HYNIX SEMICONDUCTOR INC.
发明人
SUNG, MIN GYU
分类号
H01L27/105
主分类号
H01L27/105
代理机构
代理人
主权项
地址
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