| 摘要 |
Provided is a semiconductor device having a structure in which: a well region of a high resistance p-type semiconductor is disposed in a given depth from a surface of an n-type or p-type semiconductor substrate; a plurality of trenches extend from the surface of the well region to a certain depth; a gate insulating film is formed on a surface of a convex/concave portion on which the trenches are formed; a gate electrode is embedded into the trenches. The semiconductor device includes: a gate electrode film that is disposed on a substrate surface in contact with the gate electrode embedded into the trenches in the convexo-concave portion region except for a portion in the vicinity of both ends of the trenches; and a source region and a drain region that are two low resistance n-type semiconductor layers which are disposed shallower than the depth of the well region in the well region except for a lower portion of the gate electrode film.
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