CARBON NANOTUBE DEVICE

摘要

Embodiments of the present invention provide a method of forming carbon nanotube based semiconductor devices. The method includes creating a guiding structure in a substrate for forming a device; dispersing a plurality of carbon nanotubes inside the guiding structure, the plurality of carbon nanotubes having an orientation determined by the guiding structure; fixating the plurality of carbon nanotubes to the guiding structure; and forming one or more contacts to the device. Structure of the formed carbon nanotube device is also provided.

主权项

1. A semiconductor device, comprising:
a layer of carbon nanotubes embedded inside a dielectric layer; a first conductive contact formed inside said dielectric layer, said first conductive contact being substantially close to but not in contact with said layer of carbon nanotubes; and a second and a third conductive contacts formed inside said dielectric layer next to a right side and a left side of said first conductive contact, said second and third conductive contacts being in contact with said layer of carbon nanotubes.