Barrier layers for ferroelectric memory devices

摘要

Unfavorable interactions of ferroelectric dielectric layers with silicon, intermetallic dielectrics, and other materials in metal-oxide semiconductor devices have discouraged the use of ferroelectric memory devices. This invention provides a zirconium titanate barrier layer 27 with high insulating and low leakage characteristics which is not reactive with silicon or other materials used in MFS devices. These thermally stable layers should facilitate the integration of ferroelectric materials into memory and other semiconductor devices. <IMAGE>