| 摘要 |
<p>A complete-depletion SOI transistor has a threshold Roll-Off independent of the thin thickness of the SOI film. A semiconductor device (1), which is a complete-depletion SOI (Silicon On Insulator) transistor, has a channel forming region (10) unevenly doped with impurities along the length of a gate (2). That is, heavily-doped regions (11) higher in impurity concentration than the central region are provided on the end parts of the channel forming region (10) adjacent to the source and drain (4, 5).</p> |
