发明名称 |
Counter based design for temperature controlled refresh |
摘要 |
A DRAM includes: a temperature sensor for monitoring a temperature operating condition of the DRAM; and a binary counter coupled to the temperature sensor, for receiving external commands to perform a refresh operation, and incrementing a count upon each received external command, wherein the refresh operation will be selectively skipped according to a value of the binary counter. The binary counter is activated to a first mode when the temperature sensor determines the temperature operating condition of the DRAM goes below a first threshold and activated to a second mode when the temperature sensor determines the temperature operating condition of the DRAM goes below a second threshold lower than the first threshold. |
申请公布号 |
US9412433(B2) |
申请公布日期 |
2016.08.09 |
申请号 |
US201414161655 |
申请日期 |
2014.01.22 |
申请人 |
NANYA TECHNOLOGY CORP. |
发明人 |
Morgan Donald Martin |
分类号 |
G11C11/406 |
主分类号 |
G11C11/406 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. A DRAM, comprising:
a binary counter, for receiving external commands at a steady rate, and selectively outputting an internal refresh command in response to each received external command to perform a refresh operation, wherein a binary value of the binary counter will be incremented upon each received external command, and the internal refresh command will be selectively output according to at least one of a most significant bit and a least significant bit of the binary counter so that the refresh operation will be selectively skipped according to a value of the binary counter. |
地址 |
Taoyuan TW |