发明名称 Counter based design for temperature controlled refresh
摘要 A DRAM includes: a temperature sensor for monitoring a temperature operating condition of the DRAM; and a binary counter coupled to the temperature sensor, for receiving external commands to perform a refresh operation, and incrementing a count upon each received external command, wherein the refresh operation will be selectively skipped according to a value of the binary counter. The binary counter is activated to a first mode when the temperature sensor determines the temperature operating condition of the DRAM goes below a first threshold and activated to a second mode when the temperature sensor determines the temperature operating condition of the DRAM goes below a second threshold lower than the first threshold.
申请公布号 US9412433(B2) 申请公布日期 2016.08.09
申请号 US201414161655 申请日期 2014.01.22
申请人 NANYA TECHNOLOGY CORP. 发明人 Morgan Donald Martin
分类号 G11C11/406 主分类号 G11C11/406
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. A DRAM, comprising: a binary counter, for receiving external commands at a steady rate, and selectively outputting an internal refresh command in response to each received external command to perform a refresh operation, wherein a binary value of the binary counter will be incremented upon each received external command, and the internal refresh command will be selectively output according to at least one of a most significant bit and a least significant bit of the binary counter so that the refresh operation will be selectively skipped according to a value of the binary counter.
地址 Taoyuan TW