| 发明名称 |
METHOD AND SYSTEM FOR TEMPLATE PATTERN OPTIMIZATION FOR DSA PATTERNING USING GRAPHOEPITAXY |
| 摘要 |
A method for design template pattern optimization, comprises receiving a design for a fin field effect transistor (FinFET) device, wherein the design includes a configuration of fins, creating a design template pattern for the design for use in connection with directed self-assembly (DSA) patterning using graphoepitaxy, and optimizing the design template pattern to minimize pattern density gradients, wherein the design template pattern includes a plurality of guiding lines for guiding a block-copolymer deposited during the DSA patterning and the optimizing comprises altering the guiding lines. |
| 申请公布号 |
US2016350466(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201514750742 |
申请日期 |
2015.06.25 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Guillorn Michael A.;Lai Kafai;Ozlem Melih;Tsai Hsinyu |
| 分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A computer program product comprising a non-transitory computer readable storage medium having program instructions embodied therewith, the program instructions executable by a processor to cause the processor to perform a method comprising:
receiving a design for a fin field effect transistor (FinFET) device, wherein the design includes a configuration of fins; creating a design template pattern for the design for use in connection with directed self-assembly (DSA) patterning using graphoepitaxy; and optimizing the design template pattern to minimize pattern density gradients; wherein the design template pattern includes a plurality of guiding lines for guiding a block-copolymer deposited during the DSA patterning and the optimizing comprises altering the guiding lines. |
| 地址 |
Armonk NY US |
