METHOD OF ETCH PROXIMITY CORRECTION, METHOD OF CREATING PHOTOMASK LAYOUT USING THE SAME, COMPUTER READABLE MEDIA INCLUDING A SEQUENCE OF PROGRAMMED INSTRUCTIONS STORED THEREON FOR IMPLEMENTING THE SAME AND MASK IMAGING SYSTEM

摘要

A method of performing etch proximity correction, taking into account an orientation-dependent component, includes providing a layout, selecting a target point on an edge of the layout, defining a proximity range from the target point, defining a probability function including a distance-dependent component, an orientation-dependent component, or both a distance-dependent component and an orientation-dependent component with respect to the proximity range, and calculating a surface integral of the probability function over the proximity range.