| 发明名称 |
BORON DOPED DIAMOND AND METHOD FOR ITS PRODUCTION |
| 摘要 |
<p>A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 µm, or has a volume exceeding 1 mm 3 , or a combination of such characteristics.</p> |
| 申请公布号 |
EP1463849(B1) |
申请公布日期 |
2007.01.31 |
| 申请号 |
EP20020790571 |
申请日期 |
2002.12.13 |
| 申请人 |
ELEMENT SIX LIMITED |
发明人 |
SCARSBROOK, GEOFFREY ALAN;MARTINEAU, PHILIP MAURICE;TWITCHEN, DANIEL JAMES;WHITEHEAD, ANDREW JOHN;COOPER, MICHAEL ANDREW;DORN, BAERBEL SUSANNE CHARLOTTE |
| 分类号 |
C30B29/04;C23C16/27;C30B25/10 |
主分类号 |
C30B29/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
