EXTREME ULTRA-VIOLET SENSITIVITY REDUCTION USING SHRINK AND GROWTH METHOD

摘要

Provided is a method for patterning a substrate, comprising: forming a layer of radiation-sensitive material on a substrate; preparing a pattern in the layer of radiation-sensitive material using a lithographic process, the pattern being characterized by a critical dimension (CD) and a roughness; following the preparing the pattern, performing a CD shrink process to reduce the CD to a reduced CD; and performing a growth process to grow the reduced CD to a target CD. Roughness includes a line edge roughness (LER), a line width roughness (LWR), or both LER and LWR. Performing the CD shrink process comprises: coating the pattern with a hard mask, the coating generating a hard mask coated resist; baking the hard mask coated resist in a temperature range for a time period, the baking generating a baked coated resist; and developing the baked coated resist in deionized water.

主权项

1. A method for patterning a substrate in a patterning system having a throughput in substrates per hour, the method comprising:
forming a layer of radiation-sensitive material on a substrate; preparing a pattern in the layer of radiation-sensitive material using an extreme ultra violet (EUV) lithographic process, the pattern being characterized by a critical dimension (CD) and a roughness; following the preparing the pattern, performing a CD shrink process to reduce the CD to a reduced CD; and following the performing the CD shrink process, performing a growth process to grow the reduced CD to a target CD; wherein the throughput is 50 substrates per hour or more while controlling the line wide roughness (LWR) and line edge roughness (LER) of the substrate.