| 发明名称 |
METHOD FOR MAKING A TRANSISTOR IN A STACK OF SUPERIMPOSED SEMICONDUCTOR LAYERS |
| 摘要 |
A method for making a transistor in which:
a) on a substrate, at least one semi-conductor structure is made, which is formed by a stack comprising alternating layer(s) based on at least one first semi-conductor material and layer(s) based on at least one second semi-conductor material different from the first semi-conductor material,b) a zone of the structure is made amorphous using implantations, the zone made amorphous comprising one or more portions of one or more layers based on the second semi-conductor material,c) the portions are removed by selectively etching a second semi-conductor material made amorphous towards the first semi-conductor material (FIG. 2L). |
| 申请公布号 |
US2016276494(A1) |
申请公布日期 |
2016.09.22 |
| 申请号 |
US201615070781 |
申请日期 |
2016.03.15 |
| 申请人 |
Commissariat a l'energie atomique et aux energies alternatives |
发明人 |
BARRAUD Sylvain;REBOH Shay;VINET Maud |
| 分类号 |
H01L29/786;H01L29/423;H01L21/324;H01L21/02;H01L21/266;H01L29/06;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for making a transistor formed in a stack of superimposed semi-conductor layers, the method comprising the steps of:
a) providing on a substrate, at least one semi-conductor structure formed by a stack comprising alternating layer(s) based on at least one first semi-conductor material and layer(s) based on at least one second semi-conductor material different from the first semi-conductor material, b) making amorphous, using one or more implantations, at least one zone of the structure, the zone made amorphous comprising one or more portions of one or more layers based on the second semi-conductor material, c) removing the portions by selectively etching the second semi-conductor material made amorphous towards the first semi-conductor material. |
| 地址 |
Paris FR |
