INTERFACE PASSIVATION LAYERS AND METHODS OF FABRICATING

摘要

Methods for fabricating interface passivation layers in a circuit structure are provided. The method includes forming a silicon-germanium layer over a substrate, removing a native oxide layer from an upper surface of the silicon-germanium layer, and exposing the upper surface of the silicon-germanium layer to an ozone-containing solution, resulting in an interface passivation layer with a higher concentration of germanium-dioxide present than germanium-oxide. The resulting interface passivation layer may be part of a gate structure, in which the channel region of the gate structure includes the silicon-germanium layer and the interface passivation layer between the channel region and the dielectric layer of the gate structure has a high concentration of germanium-dioxide.

主权项

1. A method comprising:
fabricating an interface passivation layer over a substrate, the fabricating comprising:
providing a substrate;growing a silicon-germanium layer over the substrate, wherein the silicon-germanium layer includes at least 50% germanium;removing a native-oxide layer from an upper surface of the silicon-germanium layer; andexposing the upper surface of the silicon-germanium layer to an ozone-containing solution, the exposing controllably oxidizing the upper surface to form the interface passivation layer, and the exposing resulting in a concentration of germanium-dioxide greater than a concentration of germanium-oxide in the interface passivation layer.