| 摘要 |
Provided is a high-purity silicon carbide powder and its production method enabling mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production 1 in an Acheson furnace 4 using a heat generator 2. The raw material for silicon carbide production 1 is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production 1 contains the siliceous rawmaterial and the carbonaceous rawmaterial at a mixture mole ratio (C/SiO 2 ) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less. |
