PERPENDICULAR MAGNETIC TUNNELING JUNCTION (MTJ) FOR IMPROVED MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM) PROCESS

摘要

A method of forming a magnetoresistive random access memory (MRAM) device including a perpendicular MTJ (magnetic tunnel junction) is provided. The method includes forming a magnetic tunneling junction (MTJ) over a bottom electrode layer. A top electrode layer is formed over an upper surface of the MTJ, and a hard mask is formed over an upper surface of the top electrode layer. A first etch is performed through the top electrode layer, through regions of the MTJ unmasked by the hard mask, to form a top electrode and an etched MTJ. Sidewall spacers are formed extending from an upper surface of the hard mask or the top electrode, along sidewalls of the top electrode and the etched MTJ, to a point below or about even with an upper surface of the bottom electrode. A resulting MRAM device structure is also provided.

主权项

1. A method for manufacturing a magnetoresistive random-access memory (MRAM) cell, the method including:
forming a magnetic tunneling junction (MTJ) over a bottom electrode layer; forming a top electrode layer over an upper surface of the MTJ; forming a hard mask over an upper surface of the top electrode layer; performing a first etch through the top electrode layer through regions of the MTJ unmasked by the hard mask, to form a top electrode and an etched MTJ; and forming sidewall spacers extending from an upper surface of the hard mask or the top electrode, along sidewalls of the top electrode and the etched MTJ, to a point below or about even with an the upper surface of the bottom electrode layer.