Method and apparatus of forming ESD protection device

摘要

The present disclosure provides a semiconductor device having a transistor. The transistor includes a source region, a drain region, and a channel region that are formed in a semiconductor substrate. The channel region is disposed between the source and drain regions. The transistor includes a first gate that is disposed over the channel region. The transistor includes a plurality of second gates that are disposed over the drain region.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming a first dummy gate and a plurality of second dummy gates over a substrate; after the forming of the first dummy gate and the plurality of second dummy gates, forming a source region, a drain region, and a channel region in the substrate; after the forming of the source region and the drain region, replacing the first dummy gate and the second dummy gates with a first functional gate and a plurality of second functional gates, respectively; wherein: the drain region is formed to be a continuous region and the plurality of the second functional gates are formed directly above the drain region; no dielectric isolation structures are formed between the channel region and the drain region; a portion of the first functional gate is formed directly above a portion of the drain region; and the channel region is formed directly below the first functional gate and between the source region and the drain region.