发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
There is provided a semiconductor device, comprising a substrate (101) that includes an integrated circuit region (1), first and second interlayer insulation films (108, 111, 112) formed above the substrate, and a reinforcing structure comprising a main-wall part (2) and a sub-wall part (3) which are formed in the first and second interlayer insulation films, wherein the main-wall part surrounds the integrated circuit region in a periphery thereof and the sub-wall part is provided apart from the main-wall part in a corner region of the semiconductor device and is located between the integrated circuit region and the first bend section of the main-wall part. Both the main-wall part and the sub-wall part are formed by metal-filled trenches (131, 132) in the first and second interlayer insulation films. |
申请公布号 |
EP3073526(A1) |
申请公布日期 |
2016.09.28 |
申请号 |
EP20160168580 |
申请日期 |
2003.02.14 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
WATANABE, KENICHI;KAWANO, MICHIARI;NAMBA, HIROSHI;SUKEGAWA, KAZUO;HASEGAWA, TAKUMI;SAWADA, TOYOJI;MITANI, JUNICHI |
分类号 |
H01L23/58;G03F1/32;G03F1/68;H01L21/027;H01L21/3205;H01L21/66;H01L21/768;H01L21/822;H01L23/00;H01L23/52;H01L23/522;H01L27/04 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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