| 摘要 |
Space and time co-divided atomic layer deposition (ALD) apparatuses and methods are provided. Substrates are moved (e.g., rotated) among multiple reaction zones, each of which is exposed to only one ALD reactant. At the same time, reactants are pulsed in each reaction zone, with purging or other gas removal methods between pulses. Separate exhaust passages for each reactant and purging during wafer movement minimizes particle contamination. Additionally, preferred embodiments permit different pulsing times in each reaction space, thus permitting flexibility in pulsing.
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