发明名称 |
Methods and systems for using oxidation layers to improve device surface uniformity |
摘要 |
The invention discloses a treatment process for a semiconductor, comprising providing a substrate, the substrate comprises silicon material; defining a trench region; removing the trench region using a plasma etching process and exposing a trench surface, the trench surface comprising surface defects; forming an oxidation layer overlaying the trench surface; removing the oxidation layer and at least a portion of the surface defects; expositing a treated trench surface, the treated trench surface being substantially free from surface defects; and forming a layer of silicon germanium material overlaying the treated trench surface. The invention further provides a semiconductor processing technique used to eliminate or reduce dislocation defect on the semiconductor device and improve device performance. In the treatment process, a substrate is subjected to at least one oxidation-deoxidation processes, where an oxidation layer is formed and then removed. |
申请公布号 |
US9449866(B2) |
申请公布日期 |
2016.09.20 |
申请号 |
US201514590011 |
申请日期 |
2015.01.06 |
申请人 |
SHANGHAI HUALI MICROELECTRONICS CORPORATION |
发明人 |
Li Quanbo;Huang Jun;Meng Xiangguo;Zhang Yu |
分类号 |
H01L21/76;H01L21/762;H01L21/302;H01L21/3065;H01L21/02;H01L21/311 |
主分类号 |
H01L21/76 |
代理机构 |
Kilpatrick Townsend & Stockton LLP |
代理人 |
Kilpatrick Townsend & Stockton LLP |
主权项 |
1. A method for processing a semiconductor substrate, the method comprising:
providing a substrate, the substrate comprises silicon material; defining a trench region; removing the trench region using a plasma etching process and exposing a trench surface, the trench surface comprising surface defects; forming an oxidation layer overlaying the trench surface; removing the oxidation layer and at least a portion of the surface defects; expositing a treated trench surface, the treated trench surface being substantially free from surface defects, the surface defect comprising a polymer material; and forming a layer of silicon germanium material overlaying the treated trench surface. |
地址 |
Shanghai CN |