Forming a capping layer for a EUV mask and structures formed thereby

摘要

Methods of forming a microelectronic structure are described. Embodiments of those methods include providing a substrate comprising a first reflective layer disposed on a second reflective layer, wherein the thickness of the first reflective layer and the thickness of the second reflective layer are less than about 100 angstroms, and forming a ruthenium oxide layer on the substrate, wherein the ruthenium oxide layer is about 50 angstroms or less.