发明名称 |
MEMORY DEVICE HAVING ONLY THE TOP POLY CUT |
摘要 |
Methods and apparatuses are contemplated herein for enhancing the efficiency of nonvolatile memory devices. In an example embodiment, a nonvolatile memory device comprises a substrate and 3D array of nonvolatile memory cells, the 3D array including a plurality of conductive layers, separated from each other by insulating layers, the plurality of conductive layers comprising a top layer, the top layer comprising n string select lines (SSLs) and one or more bottom layers, the top layer further comprises n−1 cuts, each cut electrically separating two SSLs, wherein each cut is cut to a depth of the top layer and not extending into the bottom layers and a plurality of vertical channels arranged orthogonal to the plurality of layers, each of the plurality of channels comprising a string of memory cells, each of plurality of strings coupled to a bit line, an SSL and one or more word lines. |
申请公布号 |
US2016372198(A1) |
申请公布日期 |
2016.12.22 |
申请号 |
US201514742944 |
申请日期 |
2015.06.18 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LEE Chih-Wei;KU Shaw-Hung;CHENG Cheng-Hsien |
分类号 |
G11C16/04;H01L21/768;G11C16/08;H01L27/115 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
1. A structure of a memory device, the structure of the memory device comprising:
a substrate; and a 3D array of nonvolatile memory cells, the 3D array including:
a plurality of conductive layers, separated from each other by insulating layers, the plurality of conductive layers comprising a top layer, the top layer comprising n string select lines (SSLs) and one or more bottom layers,wherein the top layer further comprises n−1 cuts, each cut electrically separating two SSLs, wherein each cut is cut to a depth of the top layer thus not extending into the bottom layers. |
地址 |
Hsin-chu TW |