| 摘要 |
PURPOSE: A method for manufacturing a radio frequency switch is provided to simplify a manufacturing process, by increasing a ratio of Con(Capacitance of a unit surface when storage and plate electrodes are not pulled together)/Coff(Capacitance of a unit surface when the electrodes are pulled together) while decreasing an operation voltage. CONSTITUTION: A first metal material used as a storage electrode(12) is formed on a silicon substrate(11) by a sputtering process. A sacrificial layer is formed on the silicon substrate having the first metal material. A second metal material used as a plate electrode(14) and a membrane is formed on the silicon substrate having the sacrificial layer. The sacrificial layer is etched to form an air gap(18). The resultant structure is oxidized to form an insulating layer(17) on the first metal material exposed to the air gap.
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