Flash Memory Device Comprising Floating Gate Utilizing Nanocrystals Embeded In Polymer Formed On Tunneling Insulating Layer,申请号KR20050030219-传众专利搜索

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发明名称	Flash Memory Device Comprising Floating Gate Utilizing Nanocrystals Embeded In Polymer Formed On Tunneling Insulating Layer
摘要
申请公布号	KR100660160(B1)	申请公布日期	2006.12.21
申请号	KR20050030219	申请日期	2005.04.12
申请人		发明人
分类号	H01L27/115	主分类号	H01L27/115
代理机构		代理人
主权项
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