METHOD FOR FORMING A GATE INSULATOR OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A gate insulator formation method is provided to easily achieve a shallow channel region and improve a margin of thickness by controlling the thickness of the gate insulator using a silicon nitride. CONSTITUTION: The method comprises the steps of depositing a silicon oxide(14a) on entire surface of an active region of a silicon substrate(10) by PECVD(plasma enhanced CVD) using helium and oxygen gases; depositing a silicon nitride(14b) on the silicon oxide(14a) by PECVD using helium gas, thereby forming a gate insulator(14'); and annealing the gate insulator(14') at temperature of 800-900°C for 10-20 seconds so as to decrease hydrogen concentration of the silicon nitride(14b), thereby forming qualified gate insulator.