发明名称 PROCESS FOR PRODUCTION OF MULTICRYSTAL SILICON AND FACILITY FOR PRODUCTION OF MULTICRYSTAL SILICON
摘要 A method for producing polycrystalline silicon, including: reacting trichlorosilane and hydrogen to produce silicon and a remainder including monosilanes (formula: SiH n Cl 4-n , wherein n is 0 to 4) containing silicon tetrachloride, and a polymer including at least trisilanes or tetrasilanes; and supplying the remainder and hydrogen to a conversion reactor and heating at a temperature within the range of 600 to 1,400°C to convert silicon tetrachloride into trichlorosilane and the polymer into monosilanes.
申请公布号 EP2070871(A1) 申请公布日期 2009.06.17
申请号 EP20070830677 申请日期 2007.10.26
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 TEBAKARI, MASAYUKI
分类号 C01B33/03;C01B33/035;C01B33/04;C01B33/107;C30B29/06 主分类号 C01B33/03
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