| 发明名称 | Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium | ||
| 摘要 | A thin film having a low dielectric constant and a high resistance to HF at a low temperature range is formed with high productivity. A film containing a predetermined element, oxygen and at least one of carbon and nitrogen is formed on a substrate by performing, a predetermined number of times, a cycle comprising: (a) supplying a source gas containing the predetermined element to the substrate; and (b) supplying a reaction gas containing nitrogen, carbon and oxygen to the substrate. | ||
| 申请公布号 | US9508543(B2) | 申请公布日期 | 2016.11.29 |
| 申请号 | US201414316897 | 申请日期 | 2014.06.27 |
| 申请人 | Hitachi Kokusai Electric Inc. | 发明人 | Orihashi Yugo;Hirose Yoshiro |
| 分类号 | H01L21/31;H01L21/469;H01L21/02;C23C16/30;C23C16/455 | 主分类号 | H01L21/31 |
| 代理机构 | Edell, Shapiro & Finnan, LLC | 代理人 | Edell, Shapiro & Finnan, LLC |
| 主权项 | 1. A method of manufacturing a semiconductor device, comprising forming a film containing a predetermined element, oxygen and at least one of carbon and nitrogen on a substrate by performing, a predetermined number of times, a cycle comprising: (a) forming a first layer containing the predetermined element on the substrate by supplying a source gas containing the predetermined element to the substrate; and (b) modifying the first layer to form a second layer containing the predetermined element, oxygen, carbon and nitrogen by supplying a reaction gas containing an isocyanate group and reacting the first layer with the reaction gas. | ||
| 地址 | Tokyo JP | ||