| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method of a semiconductor substrate capable of identifying the crystal quality difference of a semiconductor substrate, by analyzing the leakage current characteristics of a high quality semiconductor substrate for use in such a product as a solid state image sensor, requiring high yield, with high resolution.SOLUTION: An evaluation method of a semiconductor substrate for evaluating the electrical characteristics near the surface of a semiconductor substrate has a step of forming a PN junction near the surface of the semiconductor substrate, a step of measuring a reverse current at a temperature lower than 50°C, while applying a reverse voltage (V) to the PN junction while changing the magnitude, a step of calculating the slope of a graph showing the relationship of the square root (sqrt(V)) of the reverse voltage and the reverse current, and a step of evaluating and analyzing the leakage current characteristics of the semiconductor substrate from the calculated slope.SELECTED DRAWING: Figure 3 |
